Behavioral modeling of zinc-oxide, thin-film, field-effect transistors and the design of pixel driver, analog amplifier, and low-noise RF amplifier circuits |
2010 |
464 |
Zinc-oxide (ZnO) is of great interest due to transparent properties, high breakdown voltages, and low cost. Behavioral modeling is presented in this dissertation to model ZnO thin-film field-effect transistor (FET) drain current versus gate-source ... |