Passivity of TaSiN Barrier Layer on Thermochromic Vanadium Dioxide Thin Films

ECSU Author/Contributor (non-ECSU co-authors, if there are any, appear on document)
Alexis Harmon, student (Creator)
Darnell Robertson, student (Creator)
Adetayo Victor Adedeji, Associate Professor (Contributor)
Elizabeth City State University (ECSU )
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Abstract: Amorphous TaSiN is a well-known oxidation and diffusion barrier layer for microelectronic devices fabricated to operate in harsh environments. TaSiN is traditionally used as part of the metallization scheme to shield contacts and interconnects from extreme environments and inter-layer diffusion. In this project, we studied the passivity of TaSiN - VO2 interface and the anti-reflective characteristic of TaSiN cap layer. Different layers geometry investigated on fussed quartz substrates(Q) include: (i) Q\VO2, (ii) Q\ VO2\TaSiN, (iii) Q\TaSiN\ VO2 and (iv) Q\TaSiN\ VO2\TaSiN. All the layers were deposited by magnetron sputtering method. The VO2 layer was prepared by sputtering pure vanadium target and subsequently oxidizing the layer at 500°C, 800 mtorr pressure for 4 hours. TaSiN layers were deposited by reactive sputtering of pure TaSi2 target in argon and nitrogen gas mixture at room temperature. VO2 thermochromic transition were observed optically and electrically and studied to see the effect of TaSiN on the property. Transmittance and sheet resistivity of VO2 were not adversely affected by the presence of TaSiN layers. Though the transition temperature shifted slightly to higher temperatures for sandwiched VO2 layer, the transition characteristics is not degraded. Transparent TaSiN is showing promise as a passive and protective layer for opto-electronic devices.

Additional Information

Language: English
Date: 2021
Amorphous TaSiN, TaSiN layers, oxidation, magnetron sputtering

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